کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10706865 | 1023507 | 2005 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
ADI-FDTD for the modeling and simulation of VLSI interconnects
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: ADI-FDTD for the modeling and simulation of VLSI interconnects ADI-FDTD for the modeling and simulation of VLSI interconnects](/preview/png/10706865.png)
چکیده انگلیسی
In this paper, we report the implementation of alternating-direction-implicit (ADI) finite-difference time-domain (FDTD) method for modeling and simulation of VLSI interconnects in order to resolve the limitation of Courant-Friedrich-Levy (CFL) stability condition. It is revealed that the ADI-FDTD simulation approach is promising for understanding the electromagnetic phenomena of the VLSI interconnects. The amount of signal distortion as well as cross-talks between the parallel and cross-over interconnects has been calculated. For instance, signal distortion of 0.3-0.6 V with clock distortion of 0.2-0.4 V are measured for two parallel lines with 1 μm spacing.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 5, Issue 4, May 2005, Pages 356-364
Journal: Current Applied Physics - Volume 5, Issue 4, May 2005, Pages 356-364
نویسندگان
Ik-Joon Choi, Suk-In Yoon, Jin-Woo Kim, Taeyoung Won,