کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1262122 | 971847 | 2013 | 4 صفحه PDF | دانلود رایگان |
The GHO (Gd2O3-doped HfO2) films were epitaxially grown on Ge (001) substrates adopting cube-on-cube mode with zero interface layer using pulsed laser deposition (PLD). Reflection high-energy electron diffraction (RHEED) and high-resolution transmission electron microscopy (HRTEM) observation revealed a sharp interface of GHO/Ge and orientation relationship corresponding to (001)GHO//(001)Ge and [011] GHO//[011]Ge. The band offset for GHO/Ge stack was evaluated to be 3.92 eV for valence band and 1.38 eV for conduction band by X-ray photoelectron spectrum. Small equivalent oxide thickness (0.49 nm) and interface state density (7×1011 cm−2) were achieved from Au/Ti/GHO/Ge/Al capacitors.
(a) Cross-sectional HRTEM micrograph of GHO thin film grown directly on Ge (001) surface at 660 °C; (b) Enlarged drawing of rectangular region in (a); (e*), (f*), and (c) are the corresponding FFT patterns for the Ge substrate (e), GHO layer (f), and GHO/Ge regions in (b), respectivelyFigure optionsDownload as PowerPoint slide
Journal: Journal of Rare Earths - Volume 31, Issue 11, November 2013, Pages 1092–1095