کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1473132 991029 2016 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electrical and optical properties of CZTS thin films prepared by SILAR method
ترجمه فارسی عنوان
خواص الکتریکی و نوری فیلم های نازک CZTS، تهیه شده با روش SILAR
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
چکیده انگلیسی

In the present work, Cu2ZnSnS4 (CZTS) thin film was deposited onto the glass substrate by simple and economic SILAR method and its structural, morphological, optical and electrical properties were analyzed. X-ray diffraction (XRD) analysis confirms the formation of CZTS with kesterite structure and the average crystallite size is found to be 142 nm. Scanning electron microscope (SEM) image shows that the film has homogeneous, agglomerated surface without any cracks. The prepared CZTS film shows good optical absorption (104 cm−1) in the visible region and the optical band gap energy is found to be quite close to the optimum value of about 1.54 eV for solar cell application. The refractive index of the prepared film is found to be 2.85. The electrical resistivity of the film is found to be ∼10−2 Ω cm at room temperature.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Asian Ceramic Societies - Volume 4, Issue 1, March 2016, Pages 81–84
نویسندگان
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