Zirconia and hafnia films from single source molecular precursor compounds: Synthesis, characterization and insulating properties of potential high k-dielectrics

Novel hafnium and zirconium complexes with oximato ligands are used for chemical solution deposition of zirconia and hafnia thin films. X-ray diffraction and high resolution transmission electron microscopy reveal an amorphous microstructure. Scanning electron as well as atomic force microscopy show uniform and smooth films of both oxides. Electrical breakdown measurements are carried out in order to evaluate the application potential of the hafnia and zirconia thin films as dielectric layers in thin film transistors.

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► Zirconia and hafnia oxides are prepared from molecular precursors.
► Dielectrics for printed electronics application.
► Low temperature formation is realized.
► Thin films exhibit amorphous structure.