کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1662921 | 1008454 | 2006 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optical and material properties of sandwiched Si/SiGe/Si heterostructures
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
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چکیده انگلیسی
Si1âxGex layers sandwiched between Si were grown at low temperature of 450 °C by molecular beam epitaxy. A comprehensive characterization has been performed on these heterostructures by multiple techniques, including X-ray diffraction (XRD), photoluminescence, Raman scattering, Fourier transform infrared (FTIR) spectroscopy, Rutherford backscattering spectrometry (RBS), ion channeling and secondary ion mass spectroscopy (SIMS). XRD confirmed the single crystallinity and the (100) orientation of the Si1âxGex layer. The Ge compositions and layer thicknesses were precisely determined by RBS. FTIR measurements revealed the vibration modes of Si-O-Si from the oxidation on surface and Si-H due to the hydrogenization during growth.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface and Coatings Technology - Volume 200, Issue 10, 24 February 2006, Pages 3265-3269
Journal: Surface and Coatings Technology - Volume 200, Issue 10, 24 February 2006, Pages 3265-3269
نویسندگان
Z.C. Feng, J.W. Yu, J. Zhao, T.R. Yang, R.P.G. Karunasiri, W. Lu, W.E. Collins,