Effect of additional VHF plasma source base on conventional RF-PECVD for large area fast growth microcrystalline silicon films

Hydrogenated microcrystalline silicon (μc-Si:H) thin films were deposited at a high rate of 1.6 nm/s by very high frequency (VHF, 146 MHz) assisted RF (13.56 MHz) plasma enhanced chemical vapor deposition (PECVD) from a different silane concentration. The effects of the additional high excitation frequency plasma and silane concentration on the deposition rate and microstructure of films were investigated. The main reasons for the improved deposition rate and crystallinity of the μc-Si:H thin films were discussed in terms of plasma parameters.