Investigation of origins of the critically different MOS interface characteristics between dry-oxidized and wet-oxidized silicon carbide

Investigation of origins of the critically different MOS interface characteristics between dry-oxidized and wet-oxidized silicon carbide

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 178, 25 June 2017, Pages 186-189

Koji Kita, Hirohisa Hirai, Hiroyuki Kajifusa, Kohei Kuroyama, Kei Ishinoda,