کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5005886 1461377 2017 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
In-line monitoring of strain distribution using high resolution X-ray Reciprocal space mapping into 20 nm SiGe pMOS
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
In-line monitoring of strain distribution using high resolution X-ray Reciprocal space mapping into 20 nm SiGe pMOS
چکیده انگلیسی
Together with the downscaling comes the introduction of new materials, such as strained SiGe, in order to boost the transistor performances. For an effective deployment it requires the implementation of methods capable to monitor the strain directly in the process lines. High Resolution X-Ray Diffraction has played a critical role in industry for thin films metrology purpose and have the potential to extend its capability to the strain characterization in the transistors. The latest industrial instruments provide fast and automatic measurement capabilities. This enables the use of Reciprocal Space Mapping (RSM), a key feature for strain characterization, as a monitoring method. To do so, automatic data extraction of RSMs is of course mandatory, so preliminary work performed on RSM treatment will be introduced in this paper. So far these studies have been carried out on nanostructures representative of transistor technologies and reveal innovative and conclusive results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 70, 1 November 2017, Pages 99-104
نویسندگان
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