کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5006092 | 1461386 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
a-SiOx:H passivation layers for Cz-Si wafer deposited by hot wire chemical vapor deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In order to get the high photoelectric conversion efficiency a-Si:H/c-Si solar cells, high quality intrinsic hydrogenated passivation layer between the a-Si:H emitter layer and the c-Si wafer is necessary. In this work, hot wire chemical vapor deposition (HWCVD) is used to deposite intrinsic oxygen-doped hydrogenated amorphous silicon (a-SiOx:H) and hydrogenated amorphous silicon (a-Si:H) films as the intrinsic passivation layer for a-Si:H/c-Si solar cells. The passivation effect of the films on the c-Si surface is shown by the effective lifetime of the samples that bifacial covered by the films with same deposition parameters, tested by QSSPC method. The imaginary part of dielectric constant (ε2) and bonds structure of the layers are analyzed by Spectroscopic Ellipsometry(SE) and Fourier Transfom Infrared Spectroscopy(FTIR). It is concluded that: (1) HWCVD method can be used to make a-SiOx:H films as the passivation layer for a-Si:H/c-Si cells and the oxidation of the filament can be overcome by optimizing the deposition parameters. In our experiments, the lowest surface recombination velocity of the c-Si wafer is 3.0 cm/s after a-SiOx:H films passivation. (2) Oxygen-doping in the amorphous silicon layers can increase H content and the band-gap of films, similar as the phenomenon of the films deposited by PECVD.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 61, April 2017, Pages 1-4
Journal: Materials Science in Semiconductor Processing - Volume 61, April 2017, Pages 1-4
نویسندگان
Yuping He, Haibin Huang, Lang Zhou, Zhihao Yue, Jiren Yuan, Naigen Zhou, Chao Gao,