کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5362495 | 1388288 | 2008 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical and ellipsometry study of sputtered SiO2 structures with embedded Ge nanocrystals
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
SiO2 layer structures with a middle layer containing Ge nanocrystals were prepared by sputtering on n- and p-type Si substrates, and by consecutive annealing. Ge content in the middle layer was varied in the range of 40-100%. Most of the structures exhibited low breakdown voltages. The current through the structures became Schottky-like after breakdown. However, some p-type samples showed a considerable memory effect. It was obtained by spectroscopic ellipsometry that the middle layer contains amorphous Ge phase as well. The results also suggest intermixing of the layers during the sputtering and/or the annealing process.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 254, Issue 12, 15 April 2008, Pages 3626-3629
Journal: Applied Surface Science - Volume 254, Issue 12, 15 April 2008, Pages 3626-3629
نویسندگان
P. Basa, A.S. Alagoz, T. Lohner, M. Kulakci, R. Turan, K. Nagy, Zs.J. Horváth,