کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5366631 | 1388352 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Near-edge X-ray absorption fine-structure studies of GaN under low-energy nitrogen ion bombardment
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی تئوریک و عملی
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چکیده انگلیسی
The electronic structure of p-type GaN layers exposed to low-energy nitrogen ion bombardment was studied by near-edge X-ray absorption fine-structure (NEXAFS) spectroscopy. It was found that ion bombardment lead to the creation of states lying below the nitrogen absorption edge which posses p-symmetry. These states are attributed to nitrogen interstitials with different local topologies created during ion bombardment. Furthermore, the NEXAFS spectra also shows the development of a strong Ïâ-resonance above the absorption edge with increasing incident nitrogen ion energy. This peak is attributed to the formation of molecular nitrogen at interstitial positions, arising from a build up of nitrogen ions on these sites.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 252, Issue 10, 15 March 2006, Pages 3413-3416
Journal: Applied Surface Science - Volume 252, Issue 10, 15 March 2006, Pages 3413-3416
نویسندگان
V.A. Coleman, M. PetraviÄ, K.-J. Kim, B. Kim, G. Li,