Resistive switching characteristics in HfOx layer by using current sweep mode

A current sweep method is presented to probe the resistive switching behavior of hafnium-oxide-based resistive random access memory. The essentially gradual resistive switching process might be concealed by the sudden resistance transition observed in SET process using voltage sweep and RESET process using current sweep. Voltage-controlled RESET behavior is observed by the new measurement strategy such that memory device can be reset to different resistance states with the same RESET current and different compliance voltages. Under current sweep measurement, the sharp and gradual resistance transitions during SET process are observed in different types of devices. The different SET transition behavior could be used as a valuable criterion in selecting resistive switching layer materials for different targeted applications.

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► A current sweep mode is presented to probe resistive switching behavior in RRAM.
► Sharp RESET process is observed by current sweep.
► Sharp resistance transition observed from I–V might not be essential process.
► Both sharp and gradual SET process could be observed by current sweep.
► RESET process is demonstrated to be voltage-controlled.