کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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543458 | 1450394 | 2009 | 4 صفحه PDF | دانلود رایگان |
Structural and electrical properties of ALD-grown 5 and 7 nm-thick Al2O3 layers before and after implantation of Ge ions (1 keV, 0.5–1 × 1016 cm−2) and thermal annealing at temperatures in the 700–1050 °C range are reported. Transmission Electron Microscopy reveals the development of a 1 nm-thick SiO2-rich layer at the Al2O3/Si substrate interface as well as the formation of Ge nanocrystals with a mean diameter of ∼5 nm inside the implanted Al2O3 layers after annealing at 800 °C for 20 min. Electrical measurements performed on metal–insulator–semiconductor capacitors using Ge-implanted and annealed Al2O3 layers reveal charge storage at low-electric fields mainly due to location of the Ge nanocrystals at a tunnelling distance from the substrate and their spatial dispersion inside the Al2O3 layers.
Journal: Microelectronic Engineering - Volume 86, Issues 7–9, July–September 2009, Pages 1838–1841