کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5448192 | 1511768 | 2017 | 26 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Synthesis and semiconducting properties of tin(II) sulfide: Application to photocatalytic degradation of Rhodamine B under sun light
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have investigated the semiconducting and photoelectrochemical properties of SnS grown by a template-free chemical route using thiourea as precursor. Tin(II) sulfide is characterized by X-ray diffraction, scanning electron microscopy, diffuse reflectance and Raman spectroscopy. The X-ray diffraction indicates an orthorhombic SnS phase (SG: Pbnm) with a crystallite size of 52 nm while the optical measurements give a direct band gap of 1.33 eV. The Mott-Schottky plot exhibits a linear behavior, characteristic of n-type conductivity with a flat band potential of 0.19 VSCE and a donor density of 4.12 Ã 1018 cmâ3. The electrochemical impedance spectroscopy (EIS) measured in the range (10â2-5 Ã 104 Hz) shows one semicircle attributed to the bulk resistance (Rb = 20.37 kΩ cm2). The conduction band, located at 4.84 eV below vacuum, is made up of Sn2+:5p while the valence band (6.17 eV) derives mainly from S2â: 3p character. The energy band diagram, constructed from the photoelectrochemical characterization, predicts the photodegradation of Rhodamine B on SnS by H2O2 generated photoelectrochemically. 88.46% of the initial concentration (10 mg Lâ1) disappears after adsorption and 4 h of exposure to solar light. The photoactivity is nearly restored during the second cycle and follows a second order kinetic with a rate constant of 1.55 Ã 10â3 mg-1 L minâ1.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Chemistry and Physics - Volume 195, 1 July 2017, Pages 229-235
Journal: Materials Chemistry and Physics - Volume 195, 1 July 2017, Pages 229-235
نویسندگان
S. Kabouche, B. Bellal, Y. Louafi, M. Trari,