Growth mechanism of SiGe alloy nanowires synthesized in H-mode cylindrical cavity resonator

In the present paper an attempt has been made to understand the growth mechanism of SiGe alloy nanowires synthesized in H-mode cylindrical microwave cavity resonator at 900 °C in a short time of nearly 5 min. The role of ambience, microwave H-field, duration of interaction with microwaves and germanium concentration in the starting precursor have been investigated. It is believed that H-field of microwaves efficiently interacts with the starting precursor powder in air ambience and results in superheating/supersaturation, which gives rise to the formation of innumerable critical sized nuclei via heterogeneous nucleation, leading to one dimensional growth of cylindrical nanowires.