کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5457083 | 1515277 | 2017 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Mechanical properties, thermal stability and microstructure of fine-grained W-0.5â¯wt.% TaC alloys fabricated by an optimized multi-step process
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی انرژی
انرژی هسته ای و مهندسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Tungsten materials with high ductility/strength are highly desirable for a wide range of critical applications. Fine-grained W-0.5â¯wt.% TaC alloys were produced by an optimized multi-step process, consisting of high-energy ball milling, hot press sintering and subsequent hot rolling. Grain refinement induced improvement in mechanical properties is achieved with ultimate tensile strength (UTS) of 982â¯MPa and total elongation (TE) as large as â¼12.0% at 200 °C. UTS values are over 570â¯MPa at all tested temperature ranging from RT to 500 °C and the TE increases to â¼40.5% at 400 °C. These good mechanical properties are attributed to advanced process routes. Hydrogen atmosphere during the fabrication reduces oxygen impurity contents and then decreases the amount of submicron oxide particles. The multi-step process routes generate optimal microstructures with nanometric TaC particles uniformly distributed in the submicron subgrains interior. Nano-sized particles could hinder grain boundary migration, reduce grain growth rate and thus keep microstructure stability, improving low-temperature strength and ductility of W-TaC alloys. The optimized fabrication routes for such refractory alloys offer a general pathway for manufacturing bulk dispersion-strengthened materials with both good mechanical properties and thermal stability.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Materials and Energy - Volume 13, December 2017, Pages 12-20
Journal: Nuclear Materials and Energy - Volume 13, December 2017, Pages 12-20
نویسندگان
S. Miao, Z.M. Xie, L.F. Zeng, T. Zhang, X.P. Wang, Q.F. Fang, C.S. Liu,