کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
701499 | 1460763 | 2016 | 4 صفحه PDF | دانلود رایگان |
• Diamond (100) surface morphology etched by a solid-solution reaction of C into Ni at 900 °C in Ar was investigated.
• The shallow defects due to the surface polishing were removed by the etching.
• Atomically flat diamond (100) surfaces with step-terrace structures were formed on the 15 min etched regions.
The morphology of diamond (100) surfaces etched by a solid-solution reaction of C into Ni was investigated. The etching was conducted at 900 °C under an Ar atmosphere. Diamond was selectively etched only under the Ni films. Atomically flat diamond (100) surfaces with step-terrace structures were formed on the etched regions. The step height was approximately 0.18 nm, which is equivalent to that of a double monatomic layer of (100) diamond. The step-edge lines were along the < 110 > directions. These results indicate that the diamond etching by the solid-solution reaction of C into Ni was anisotropic.
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Journal: Diamond and Related Materials - Volume 68, September 2016, Pages 127–130