کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8961462 1646495 2018 12 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Basic ammonothermal growth of Gallium Nitride - State of the art, challenges, perspectives
ترجمه فارسی عنوان
رشد سریع آمونوترمال گالیم نیترید - وضعیت پیشرفت، چالش ها، دیدگاه ها
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد دانش مواد (عمومی)
چکیده انگلیسی
Recent progress in ammonothermal technology of bulk GaN growth in basic environment is presented and discussed in this paper. This method enables growth of two-inch in diameter crystals of outstanding structural properties, with radius of curvature above tens of meters and low threading dislocation density of the order of 5 × 104 cm−2. Crystals with different types of conductivity, n-type with free electron concentration up to 1019 cm−3, p-type with free hole concentration of 1016 cm−3, and semi-insulating with resistivity exceeding 1011 Ω cm, can be obtained. Ammonothermal GaN of various electrical properties is described in terms of point defects present in the material. Potential applications of high-quality GaN substrates are also briefly shown.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Progress in Crystal Growth and Characterization of Materials - Volume 64, Issue 3, September 2018, Pages 63-74
نویسندگان
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