کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
9594518 1507964 2005 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Diffusion-limited submonolayer pentacene thin film growth on hydrogen-passivated Si(1 1 1) substrates
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
Diffusion-limited submonolayer pentacene thin film growth on hydrogen-passivated Si(1 1 1) substrates
چکیده انگلیسی
Growth of ultrathin pentacene films is investigated as a function of coverage by atomic force microscopy. Initially, pentacene grows as monolayer fractal islands and evolves into compact islands before coalescence. Stabilization factors, against diffusion-limited-aggregation in terms of interaction between islands and interlayer monomer transport, are proposed to explain the shape transition. Simulations based on a simple model of heterogeneous film growth are found to agree with experimental observations. The role of surface diffusion in island shape transition is revealed by a comparison between pentacene growth on the hydrogen terminated and oxidized Si substrates.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Surface Science - Volume 595, Issues 1–3, 5 December 2005, Pages 157-164
نویسندگان
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