Strain and defect engineering in Si/Si3N4/Si by high temperature-pressure treatment

Concentration profiles of nitrogen and of accumulated oxygen in CzSi:N treated at ≤920 K were not affected markedly by HP. The strained nitride layers were formed in effect of the treatment at ≥1070 K. The treatments at ≥1270 K resulted in formation of the well-defined layered structures. Applied at 1400 K, HP assisted in a creation of the defect-free Si/Si3N4/Si structures.