کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
701131 | 1460818 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Mapping of extended defects in B-doped (001) homoepitaxial diamond films by electron-beam-induced current (EBIC) and cathodoluminescence (CL) combination technique
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have studied on a spatial distribution of extended defects with shell-shape pits in B-doped (001) homoepitaxial diamond films using electron-beam-induced current (EBIC) and cathodoluminescence (CL) combination technique. The EBIC image corresponded to the comprehensive one of band-A emission (430 nm) in CL measurements. In addition, both EBIC and CL images also corresponded to optical microscope image (Nomarski) with shell-shape pits. These experimental results indicate that the shell-shape pits are accompanied with localized electrically-active-defects originating from extended defects such as dislocation with band-A CL emission. It is suggested that extended defects such as dislocations result in the formation of shell-shape pits.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 17, Issues 4–5, April–May 2008, Pages 489–493
Journal: Diamond and Related Materials - Volume 17, Issues 4–5, April–May 2008, Pages 489–493
نویسندگان
Sung-Gi Ri, Xiao Li Yuan, Takashi Sekiguchi, Norio Tokuda, Masahiko Ogura, Hideyo Okushi, Satoshi Yamasaki,