High-pressure and high-temperature annealing effects of boron-implanted diamond

We show that high-pressure and high-temperature (HPHT) annealing of ion-implanted diamond is efficient as a doping technique. The HPHT annealing condition is located in the thermodynamically stable region for diamond. The HPHT annealing is highly effective for the recovery of damage induced by ion implantation. In the entire annealing temperature range, the HPHT annealing is more efficient than conventional thermal annealing methods such as vacuum annealing. At 1400 °C, we obtained the highest boron doping efficiency of 7.1%, which is ten times higher than that by vacuum annealing.