A MIS transistor using the nucleation surface of polycrystalline diamond

In this work, the nucleation surface of a polycrystalline diamond film was used for the first time to fabricate a MISFET structure using standard photolithographic procedures, with a channel length of 100 μm. The resulting structure works as an enhancement-type p-type MOSFET. The ION/IOFF ratio is about three orders of magnitude. The saturation of the current is clearly observed, with IDS currents of about 20 nA for VDS of 20 V. The smoothness of the nucleation surface allows a higher control of the electrodes, as well as their size decrease. The results show that, even though in an early stage, this investigation opens the door for a new generation of devices built on free-standing diamond films.