کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
701436 1460762 2016 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Strain-controlled boron and nitrogen doping of amorphous carbon layers for hard mask applications
ترجمه فارسی عنوان
دوپینگ بور و نیتروژن تحت فشار با استفاده از ورقه های کربن آمورف برای کاربردهای ماسک سخت
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
چکیده انگلیسی

Highlight
• N- and B-doped amorphous carbon layers were grown by PECVD.
• The dry etch resistance of the ACLs was enhanced by boron doping.
• The dry etch resistance of the ACLs was negatively affected by N doping.
• DFT calculation highlighted the stronger of CC bonds induced by B doping.

Nitrogen- and boron-doped amorphous carbon layers (ACLs) were grown by plasma- enhanced chemical vapor deposition (PECVD) on a Si substrate and characterized by Raman and X-ray photoelectron spectroscopy (XPS) techniques. Increasing doping levels resulted in a shift in the Raman G-peak of the doped ALCs, indicating a change in bond lengths upon doping. The XPS N1s and B1s spectra revealed the presence of different types of N-related (involving pyridinic, pyrrolinic, and graphitic N) and B-related (corresponding to BC2O and BC species) bonds in the N- and B-doped ACLs, with N and B doping levels ranging from 2.03 to 3.94 at.% and from 1.44 to 10.4 at.%, respectively. These results suggest that the dry etch resistance of the present ACLs was enhanced by B doping and negatively affected by N doping. Density functional theory calculations highlighted the strengthening of CC bonds induced by B doping and their corresponding weakening caused by N doping as possible explanations for the effects of doping on the dry etching characteristics of the ACLs.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 69, October 2016, Pages 102–107
نویسندگان
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