کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
702212 | 1460797 | 2013 | 4 صفحه PDF | دانلود رایگان |
Hexagonal GaN films with the [0001] direction parallel to the surface normal were grown on (111) oriented single crystalline diamond substrates by plasma-assisted molecular beam epitaxy. Pre-treatments of the diamond surface with the nitrogen plasma beam, prior the nucleation of a thin AlN layer, eliminated the inversion domains and reduced the density of threading dislocations in the GaN epilayers. The films have an in-plane epitaxial relationship [1010]GaN//[110]diamond. Thus GaN (0001) thin films of single epitaxial relationship and of single polarity were realised on diamond with AlN buffer.
► (0001) oriented hexagonal GaN films were grown on (111) oriented single crystalline diamond substrates.
► Inversion domains are eliminated with nitrogen plasma pre-treatments prior the nucleation of a thin AlN layer.
► The films have an in-plane epitaxial relationship [1010]GaN/ /[110]diamond.
► GaN (0001) films of single epitaxial relationship and of single polarity were realized on diamond with AlN buffer.
Journal: Diamond and Related Materials - Volume 34, April 2013, Pages 9–12