Atomically flat diamond (111) surface formation by homoepitaxial lateral growth

A process of homoepitaxial growth of diamond (111) films by microwave plasma-enhanced chemical vapor deposition has been investigated characterizing areas by ex-situ atomic force microscopy. The evolution of surface morphology during a lateral growth of (111) diamond was visualized utilizing a mesa structure as a marker. Lateral growth forms atomically flat surfaces, which show atomically flat terraces over several hundred nm widths and single bilayer steps of (111) diamond.