کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7110899 | 1460747 | 2018 | 17 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The role of hydrogen plasma power on surface roughness and carrier transport in transfer-doped H-diamond
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Surface transfer doping of diamond fundamentally requires termination of the diamond surface with a species such as hydrogen to allow the interfacial charge exchange required to establish surface conductivity. Here we show the effects of varied hydrogen plasma power on the roughness and conductivity of the (100) diamond surface. Prior to hydrogen termination, substrates were etched using tailored Cl2â¯+â¯Ar and O2â¯+â¯Ar chemistries to produce a very smooth surface of ~0.2â¯nm roughness average while also removing ~3.4â¯Î¼m from the top surface as measured by Atomic Force Microscopy (AFM). Use of etching post polishing provides an effective means of producing smoother diamond surfaces with reduced crystal damage as opposed to scaife polishing alone. By producing nominally identical etched surfaces, a relationship between surface conductivity and hydrogen termination plasma power was observed. Using MoO3 as a surface acceptor material, Hall measurements were performed to examine sheet resistance, carrier density and mobility within the diamond. Increased surface conductivity due to enhanced hole mobility was observed at higher hydrogen plasma power conditions, despite an associated increase in roughness of the diamond surface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Diamond and Related Materials - Volume 84, April 2018, Pages 48-54
Journal: Diamond and Related Materials - Volume 84, April 2018, Pages 48-54
نویسندگان
Kevin G. Crawford, Alexandre Tallaire, Xu Li, David A. Macdonald, Dongchen Qi, David A.J. Moran,