Study and enhance the photovoltaic properties of narrow-bandgap Cu2SnS3 solar cell by p-n junction interface modification

► Photovoltaic properties of narrow-bandgap Cu2SnS3 (CTS) are studied for the first time. ► CTS can be a promising candidate as bottom cell absorber layer for low-cost thin film tandem solar cell application. ► A p-n junction interface modification method that can enhance the performance of the studied CTS solar cell is demonstrated.