کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10408879 | 893737 | 2005 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Femtosecond laser-induced damage morphologies of crystalline silicon by sub-threshold pulses
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
The effect of sub-threshold pulses of circularly polarized Ti:sapphire femtosecond laser system on crystalline (1Â 0Â 0) silicon wafer was investigated. Surface damage morphologies were studied by irradiating the test silicon surface with pulses (peak fluence of 0.25Â J/cm2) in succession. These pulses were below the single-pulse surface damage threshold. After the few initial pulses, the observed surface damage morphologies were found to be characterized by a minor phase change region and a major surface damage area at the center, corresponding to the well-known laser-induced periodic surface structure (LIPSS). Further increase in the number of pulses resulted in the formation of new surface morphologies with different features such as ablation, modification, and re-deposited materials. These features were reproducible and more distinguishable at higher number of pulses.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics and Lasers in Engineering - Volume 43, Issue 9, September 2005, Pages 977-986
Journal: Optics and Lasers in Engineering - Volume 43, Issue 9, September 2005, Pages 977-986
نویسندگان
D.V. Tran, H.Y. Zheng, Y.C. Lam, V.M. Murukeshan, J.C. Chai, D.E. Hardt,