کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10408879 893737 2005 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Femtosecond laser-induced damage morphologies of crystalline silicon by sub-threshold pulses
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Femtosecond laser-induced damage morphologies of crystalline silicon by sub-threshold pulses
چکیده انگلیسی
The effect of sub-threshold pulses of circularly polarized Ti:sapphire femtosecond laser system on crystalline (1 0 0) silicon wafer was investigated. Surface damage morphologies were studied by irradiating the test silicon surface with pulses (peak fluence of 0.25 J/cm2) in succession. These pulses were below the single-pulse surface damage threshold. After the few initial pulses, the observed surface damage morphologies were found to be characterized by a minor phase change region and a major surface damage area at the center, corresponding to the well-known laser-induced periodic surface structure (LIPSS). Further increase in the number of pulses resulted in the formation of new surface morphologies with different features such as ablation, modification, and re-deposited materials. These features were reproducible and more distinguishable at higher number of pulses.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics and Lasers in Engineering - Volume 43, Issue 9, September 2005, Pages 977-986
نویسندگان
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