کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10409316 | 893968 | 2011 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Phototransistors for CMOS Optoelectronic Integrated Circuits
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Phototransistors for CMOS Optoelectronic Integrated Circuits Phototransistors for CMOS Optoelectronic Integrated Circuits](/preview/png/10409316.png)
چکیده انگلیسی
Integrated pnp phototransistors (PT) built in 0.6 μm OPTO ASIC CMOS are presented. The production starts with a low doped epitaxial wafer as bulk material. This work presents several different types of phototransistors due to the realization of base and emitter areas. The different types are optimized for different goals, e.g. responsivity or bandwidth. Responsivities up to 76 A/W, 35 A/W for DC light at 675 nm and 850 nm, respectively, as well as 37.2 A/W for modulated light at 300 kHz and 850 nm wavelength were achieved. On the other hand bandwidths up to 14 MHz with lower responsivity were achieved with different design of base and emitter area. Due to the fact that the used process is a production silicon CMOS technology, cheap integration of an integrated optoelectronic circuit is possible. Possible applications are low cost, highly sensitive optical receivers, optical sensors, systems-on-a-chip for optical distance measurement or combined to an array even a 3D camera.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators A: Physical - Volume 172, Issue 1, December 2011, Pages 140-147
Journal: Sensors and Actuators A: Physical - Volume 172, Issue 1, December 2011, Pages 140-147
نویسندگان
P. Kostov, K. Schneider-Hornstein, H. Zimmermann,