کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10409322 893968 2011 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Characterization and simulation of Avalanche PhotoDiodes for next-generation colliders
موضوعات مرتبط
مهندسی و علوم پایه شیمی الکتروشیمی
پیش نمایش صفحه اول مقاله
Characterization and simulation of Avalanche PhotoDiodes for next-generation colliders
چکیده انگلیسی
This work reports on a novel effort to use Avalanche PhotoDiodes (APDs) to construct an active pixel detector for charged particles in collider experiments. A dual-beam Focused Ion Beam setup was used to characterize the response of the device. Results on the sensitivity of the guard structures separating pixels are compared to a detailed Monte Carlo simulation. These results suggest that, through control of the doping concentration, devices with a much improved fill factor can be achieved. A new technology is proposed that could elevate the fill factor to 100%.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators A: Physical - Volume 172, Issue 1, December 2011, Pages 181-188
نویسندگان
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