Investigation on silicon-glass electrostatic bonding time

To simulate the process of anodic bonding and lay foundation for the computer aided design (CAD) of anodic bonding, this paper presents an approach to study anodic bonding time. In order to describe the relationship of bonding time, bonding voltage, and temperature on the basis of experiments, the concept of critical bonding time is introduced, and the measuring method of critical time is given. Based on anodic bonding mechanism and the bonding experiments, the formula of the critical time is deduced. Experimental results show that the mean-root-square error from the formula is less than 5%. The formula concretely explains the relationship of bonding time, bonding voltage, and bonding temperature. Accordingly a quantitative mathematical model for the simulation of anodic bonding technology is proposed.