کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10409404 | 894011 | 2006 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigation on silicon-glass electrostatic bonding time
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Investigation on silicon-glass electrostatic bonding time Investigation on silicon-glass electrostatic bonding time](/preview/png/10409404.png)
چکیده انگلیسی
To simulate the process of anodic bonding and lay foundation for the computer aided design (CAD) of anodic bonding, this paper presents an approach to study anodic bonding time. In order to describe the relationship of bonding time, bonding voltage, and temperature on the basis of experiments, the concept of critical bonding time is introduced, and the measuring method of critical time is given. Based on anodic bonding mechanism and the bonding experiments, the formula of the critical time is deduced. Experimental results show that the mean-root-square error from the formula is less than 5%. The formula concretely explains the relationship of bonding time, bonding voltage, and bonding temperature. Accordingly a quantitative mathematical model for the simulation of anodic bonding technology is proposed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators A: Physical - Volume 127, Issue 1, 28 February 2006, Pages 194-199
Journal: Sensors and Actuators A: Physical - Volume 127, Issue 1, 28 February 2006, Pages 194-199
نویسندگان
Chuai Rongyan, Liu Xiaowei, Chen Weiping, Song Minghao, Liu Yibo,