کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10409475 894046 2016 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Design and fabrication of AlGaInP-based micro-light-emitting-diode array devices
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Design and fabrication of AlGaInP-based micro-light-emitting-diode array devices
چکیده انگلیسی
An integrated high-resolution (individual pixel size 80 μm×80 μm) solid-state self-emissive active matrix programmed with 320×240 micro-light-emitting-diode arrays structure was designed and fabricated on an AlGaInP semiconductor chip using micro electro-mechanical systems, microstructure and semiconductor fabricating techniques. Row pixels share a p-electrode and line pixels share an n-electrode. We experimentally investigated GaAs substrate thickness affects the electrical and optical characteristics of the pixels. For a 150-μm-thick GaAs substrate, the single pixel output power was 167.4 μW at 5 mA, and increased to 326.4 μW when current increase to 10 mA. The device investigated potentially plays an important role in many fields.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optics & Laser Technology - Volume 78, Part B, April 2016, Pages 34-41
نویسندگان
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