Ferroelectric active sensors

In this article, a new type of sensor involving ferroelectric domain displacements is theoretically and experimentally studied. The principle of such sensors, called ferroelectric active sensors (FAS), is based on the remnant polarisation measurement, carried out during a transfer of electric charges caused by polarisation switching. As demonstrator, the case of thermal sensors is treated. The active area of the sensor is a PNZT film, realised on silicon substrate. The theoretical performances of the device are evaluated and compared with classical pyroelectric responses. It is finally experimentally shown that this kind of sensor needs to overcome the problem of material fatigue.