کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10409911 | 894188 | 2005 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Actuation by electrostatic repulsion by nonvolatile charge injection
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
الکتروشیمی
پیش نمایش صفحه اول مقاله

چکیده انگلیسی
In this paper a novel actuation scheme through electrostatic repulsive-force generated by nonvolatile charge injection is proposed and demonstrated. Nonvolatile charge injection is achieved by integrating MEMS devices with electrically erasable programmable read only memory (EEPROM) structures. Repulsive force of â¼0.2 μN is observed across a 3 μm gap with poly-silicon beams of 360 μm in length. Larger actuation force can be achieved with smaller gap. A capacitor network model is also proposed to analyze the charge injection and distribution in such systems. This actuation scheme holds promises in achieving large-tuning-range varactors, dynamically tunable mechanical resonators, and wear-free hinges, etc.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators A: Physical - Volume 119, Issue 1, 28 March 2005, Pages 236-244
Journal: Sensors and Actuators A: Physical - Volume 119, Issue 1, 28 March 2005, Pages 236-244
نویسندگان
Zengtao Liu, Myongseob Kim, Nick Yu-Min Shen, Edwin C. Kan,