کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10410352 | 894432 | 2005 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High H2 sensing behavior of TiO2 films formed by thermal oxidation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی آنالیزی یا شیمی تجزیه
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چکیده انگلیسی
A highly sensitive H2 gas sensor was prepared by the thermal oxidation of a Ti plate at 600-1000 °C. The H2 sensitivity (the ratio of the resistances between N2 and 1.0% H2 balanced with N2) of the oxidized TiO2 increased exponentially with increasing oxidation temperature up to 900 °C but decreased drastically at 1000 °C. The maximum sensitivity to 1.0% H2 was 1.2 Ã 106, which is the highest value reported in the literature. The mechanism for the enhanced H2 sensing was examined by investigating the phase, thickness and morphology of the oxidized TiO2 layer and the sensor response time. The thermally oxidized specimens exhibited an approximately linear dependence of the sensitivity on the H2 concentrations from 50 to 10,000 ppm, and excellent sensitivity (â¼103) was still obtained in the sensor operated at temperatures as low as 150 °C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators B: Chemical - Volume 107, Issue 1, 27 May 2005, Pages 264-270
Journal: Sensors and Actuators B: Chemical - Volume 107, Issue 1, 27 May 2005, Pages 264-270
نویسندگان
Youn-Ki Jun, Hyun-Su Kim, Jong-Heun Lee, Seong-Hyeon Hong,