کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10411053 | 894540 | 2005 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Remote sensing system for hydrogen using GaN Schottky diodes
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موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی آنالیزی یا شیمی تجزیه
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The characteristics and operation of a GaN Schottky diode-based remote sensing system for hydrogen is described. The detection mechanism is a change in effective barrier height of the Pt or Pd contact on the GaN in the presence of even 600Â ppm of H2 This translates to a change in forward current at fixed bias voltage or a change in voltage across diode at fixed bias current, which means a change in impedance. The change in sensor impedance is amplified and the signal is transmitted at 916Â MHz to a remote receiver base station. The base station response can be set to many possibilities, including alarms for signals above a particular threshold. The sensor output increases with ambient temperature due to increased cracking efficiency of the hydrogen on the Pt or Pd surface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators B: Chemical - Volume 105, Issue 2, 28 March 2005, Pages 329-333
Journal: Sensors and Actuators B: Chemical - Volume 105, Issue 2, 28 March 2005, Pages 329-333
نویسندگان
A.EL. Kouche, J. Lin, M.E. Law, S. Kim, B.S. Kim, F. Ren, S.J. Pearton,