کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10412894 | 895283 | 2005 | 14 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Modeling ISFET microsensor and ISFET-based microsystems: a review
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
شیمی
شیمی آنالیزی یا شیمی تجزیه
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چکیده انگلیسی
Silicon technology is one of the most promising for sensor development. Moreover, electronic simulation tools, originally introduced to design electronic circuits, can be adapted to design silicon-based chemical- and bio-sensors. These considerations lead to the description of the models we developed and implemented in the program SPICE for simulating ion-sensitive field-effect transistors (ISFETs) and ISFET-based microsystems. The implementation in SPICE and the simulation results are described in terms of each model. In particular, a new model of a Si3N4-gate ISFET operating under subthreshold conditions and the related electrochemical characterization are presented. The ISFET models were then used to develop a CAD system that can be considered as a general-purpose tool for designing integrated ISFET-based sensors and microsystems with on-chip processing and control capabilities.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators B: Chemical - Volume 105, Issue 1, 14 February 2005, Pages 14-27
Journal: Sensors and Actuators B: Chemical - Volume 105, Issue 1, 14 February 2005, Pages 14-27
نویسندگان
Sergio Martinoia, Giuseppe Massobrio, Leandro Lorenzelli,