کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10412894 895283 2005 14 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Modeling ISFET microsensor and ISFET-based microsystems: a review
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی آنالیزی یا شیمی تجزیه
پیش نمایش صفحه اول مقاله
Modeling ISFET microsensor and ISFET-based microsystems: a review
چکیده انگلیسی
Silicon technology is one of the most promising for sensor development. Moreover, electronic simulation tools, originally introduced to design electronic circuits, can be adapted to design silicon-based chemical- and bio-sensors. These considerations lead to the description of the models we developed and implemented in the program SPICE for simulating ion-sensitive field-effect transistors (ISFETs) and ISFET-based microsystems. The implementation in SPICE and the simulation results are described in terms of each model. In particular, a new model of a Si3N4-gate ISFET operating under subthreshold conditions and the related electrochemical characterization are presented. The ISFET models were then used to develop a CAD system that can be considered as a general-purpose tool for designing integrated ISFET-based sensors and microsystems with on-chip processing and control capabilities.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Sensors and Actuators B: Chemical - Volume 105, Issue 1, 14 February 2005, Pages 14-27
نویسندگان
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