کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10417437 | 902365 | 2014 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of excitation frequency on structural and electrical properties of spray pyrolyzed CuInS2 thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی صنعتی و تولید
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Influence of excitation frequency on structural and electrical properties of spray pyrolyzed CuInS2 thin films Influence of excitation frequency on structural and electrical properties of spray pyrolyzed CuInS2 thin films](/preview/png/10417437.png)
چکیده انگلیسی
This paper reports the cost effective deposition of the copper indium sulfide (CuInS2) thin films under atmospheric conditions via ultrasonic spray pyrolysis. Structural and electrical properties of these films have been tailored by controlling the nozzle excitation frequency and the solution loading. Smoother films have been obtained via 120Â kHz excitation frequency compare to the 48Â kHz. Band gap energy of the films has also been tailored via excitation frequency. UV-vis-NIR analysis revealed that films deposited at 48Â kHz excitation frequency had lower band gap energies. Although, both excitation frequencies resulted chalcopyrite structure, crystallinity of the CuInS2 films was better for 120Â kHz. On the other hand, better optical absorption in visible and near infrared region was observed at 48Â kHz. Moreover, room temperature electrical conductivity of the samples deposited at 48Â kHz excitation frequency was higher than that of samples deposited at 120Â kHz. Temperature dependent electrical conductivity data showed that variable range hopping mechanism can be used to explain the conduction of spray pyrolyzed CuInS2 thin films. Electrical mobility as high as 48Â cm2/Vs has been observed for the sample deposited from 0.51Â ml/cm2 loading at 48Â kHz excitation frequency. This value is very close to the mobility of vacuum deposited thin films like amorphous silicon, which is one of the most commonly used semiconductor in electronic and energy applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Materials Processing Technology - Volume 214, Issue 9, September 2014, Pages 1879-1885
Journal: Journal of Materials Processing Technology - Volume 214, Issue 9, September 2014, Pages 1879-1885
نویسندگان
Nurdan D. Sankir, Erkan Aydin, Mehmet Sankir, Ali Bozbey,