کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10418386 902846 2005 12 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A comparative study of the effects of reactor geometry on the quality of CVD diamond films deposited on silicon substrates with mixture of CH4/H2 gas flow
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی صنعتی و تولید
پیش نمایش صفحه اول مقاله
A comparative study of the effects of reactor geometry on the quality of CVD diamond films deposited on silicon substrates with mixture of CH4/H2 gas flow
چکیده انگلیسی
This paper investigates the quantifiable effects of reactor geometry on the quality of CVD diamond films. This detailed experimental study includes two types of reactor geometries: the 5 in. quartz dome with 3 in. substrate reactor and the 4 in. quartz dome with 2 in. substrate reactor geometry. More specifically, a comparison between the output variables of both reactor geometries is examined and a complete analysis is presented. The reactor output variables include film morphology, structural quality as measured by Raman spectra and scanning electron microscopy (SEM) techniques, linear growth rate, carbon conversion efficiency, and specific yield. The study shows the impact of variation in the reactor geometry is significant on film morphology, particularly at low temperatures, weight gain, and carbon conversion efficiency. On the other hand, FWHM, linear growth rate, and normalized carbon conversion efficiency are not significantly affected by the reactor geometry.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Materials Processing Technology - Volume 169, Issue 1, 30 October 2005, Pages 26-37
نویسندگان
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