کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10706033 | 1023289 | 2005 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Advanced monolithic quantum well infrared photodetector focal plane array integrated with silicon readout integrated circuit
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک اتمی و مولکولی و اپتیک
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چکیده انگلیسی
Today, most infrared focal plane arrays (FPAs) utilize a hybrid scheme. To achieve higher device reliability and lower cost, monolithic FPAs with Si based readout integrated circuits (ROICs) are the trend of the future development. In this paper, two approaches for monolithic FPAs are proposed: double sided integration and selective epitaxy integration. For comparison, the fabrication process for hybrid quantum well infrared photodetectors (QWIP) FPAs are also described. Many problems, such as the growth of QWIPs on Si substrate and processing incompatibility between Si and III-V semiconductors, need to be solved before monolithic FPAs can be realized. Experimental work on GaInAs/InP QWIP-on-Si is given in this paper. A record high detectivity of 2.3 Ã 109 cm Hz1/2/W was obtained for one QWIP-on-Si detector at 77 K.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Infrared Physics & Technology - Volume 46, Issue 3, January 2005, Pages 199-207
Journal: Infrared Physics & Technology - Volume 46, Issue 3, January 2005, Pages 199-207
نویسندگان
Jutao Jiang, Stanley Tsao, Kan Mi, Manijeh Razeghi, Gail J. Brown, Christopher Jelen, Meimei Z. Tidrow,