کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10710297 1024668 2005 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Toggle magnetoresistance random access memory based on magnetostatically coupled bilayers
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Toggle magnetoresistance random access memory based on magnetostatically coupled bilayers
چکیده انگلیسی
A new scheme of toggle magnetoresistance random access memory (MRAM) based on magnetostatically coupled (MSC) bilayers without antiferromagnetic coupling is investigated. Analysis shows that the toggle-MRAM operation and necessary storage lifetime can be achieved by choosing an appropriate aspect ratio for MSC bilayers having reasonable area and thickness. The attenuation factor defined as the ratio of the effective MSC field to the demagnetizing field is found to be essential to obtain the toggle-mode operation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Magnetism and Magnetic Materials - Volume 295, Issue 3, September 2005, Pages 246-250
نویسندگان
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