Resistive switching effects in CeO2/La0.7(Sr0.1Ca0.9)0.3MnO3/Pt heterostructures prepared by pulse laser deposition method

The heterostructural junctions of CeO2/La0.7(Sr0.1Ca0.9)0.3MnO3/Pt (CeO2/LSCMO/Pt) were prepared using pulse laser deposition technique. Their resistive switching (RS) behavior was investigated. As compared to the metal/manganite/Pt junction, the CeO2/LSCMO/Pt device displayed an improved switching characteristic. The RS effects with characteristics of bipolar, threshold, and complementary were realized by adjusting the thicknesses of the CeO2 layer in the CeO2/LSCMO/Pt junctions. Under a higher external bias voltage, the threshold and complementary switching modes of the junctions could turn into bipolar switching mode. The switching behavior shows strong dependence on the O2 partial pressure during the fabrication, indicating that the amount and behavior of the oxygen at the interface play an important role in the determination of the RS behavior. The observed switching behavior is related to the modification of the accumulation/depletion layers as well as the interfacial potential barrier due to the migration of the oxygen vacancies.