کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
10728794 1038110 2013 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Bipolar resistive switching of solution processed TiO2-graphene oxide nanocomposite for nonvolatile memory applications
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک و نجوم (عمومی)
پیش نمایش صفحه اول مقاله
Bipolar resistive switching of solution processed TiO2-graphene oxide nanocomposite for nonvolatile memory applications
چکیده انگلیسی
In this study, we report the observation of memory effect in TiO2-GO nanocomposite films. Electrical properties of the prepared Al/TiO2-GO composite/ITO devices have shown stable and reproducible bipolar resistive switching behavior. The TiO2-GO composite films were prepared using solution method by spin coating technique. Observed results have shown that the inclusion of GO in the TiO2 matrix have exhibited a significant role in the resistive switching mechanism. The device has exhibited an excellent memory characteristic with low operating voltages, good endurance up to 105 cycles and long retention time more than 5×103s.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physics Letters A - Volume 377, Issue 37, 8 November 2013, Pages 2432-2435
نویسندگان
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