The angular dependence of an Si energy deposition spectrometer response at several radiation sources

Due to the high geometrical asymmetry of the Si-diode semiconductor, an angular dependence of the response would be expected. This work presents analyses and discusses the results of angular dependence studies obtained at the different radiation sources mentioned. It was found that these angular dependences vary with the type and energy of radiation. The influence of these variations on the use as a dosimeter onboard aircraft is also studied and discussed.