کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11009809 | 1821469 | 2018 | 14 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of substrate orientation on Sb-based MWIR photodetector characteristics
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک اتمی و مولکولی و اپتیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Effects of GaSb substrate orientation and surface polarity on performance of MWIR photodetectors (PD) were evaluated by comparing devices fabricated on (1â¯0â¯0), (2â¯1â¯1)A and B, and (3â¯1â¯1)A and B oriented substrates. Two types of PDs were evaluated: bulk InAsSb barrier PD with wavelength â¼4â¯Âµm, and type-II strained layer superlattice (T2SL) PD with wavelength 5.5â¯Âµm. Epitaxial structures were grown by solid source molecular beam epitaxy (MBE) on substrates with various orientations side-by-side in the same growth run. Material performance was evaluated by AFM, Nomarski microscopy, x-ray diffraction, 77â¯K photoluminescence (PL), and PD current-voltage and spectral testing. All wafers demonstrated reasonable surface morphology, with some variability in roughness from wafer to wafer. Bulk nBn devices fabricated on the high-index substrates show a blue shift up to 0.15â¯Âµm for both 77â¯K PL and for spectral cutoff wavelength compared to the same structure on the (1â¯0â¯0) substrate. Growth on high-index substrates also showed moderate reduction of quantum efficiency (QE) and variations in dark current (Jd). The (3â¯1â¯1)A and (2â¯1â¯1)A oriented structures exhibited the most significant Jd reduction, by a factor of â¼3 and â¼6, respectively. Substrate orientation induces more variation in the T2SL PD parameters, especially in Jd and QE. Here, the (2â¯1â¯1)B orientation demonstrates a red shift of the PL and cutoff wavelength by about 1â¯Âµm. These results suggest that high-index substrates can be explored to fine-tune and manipulate unique PD characteristic properties for specific applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Infrared Physics & Technology - Volume 95, December 2018, Pages 27-32
Journal: Infrared Physics & Technology - Volume 95, December 2018, Pages 27-32
نویسندگان
Dmitri Lubyshev, Joel M. Fastenau, Mike Kattner, Phil Frey, Scott A. Nelson, Ryan Flick, Michael Rogers, Amy W.K. Liu, Patrick Flint, Nikolai Faleev,