Pyroelectric infrared device with overlap dual capacitor structure sensor

The pyroelectric infrared device that uses the overlap dual capacitor structure sensor is reported in this paper. The sensor is prepared by use of the PZT and P(VDF-TrFE) composite material. In order to fabricate the new-device, we use the overlap dual capacitor structure sensor to replace the conventional parallel dual capacitor structure sensor. The overlap dual capacitor structure can reduce the radiation area of the sensor by half; the smaller sensor is more conducive to the miniaturization of the device and the preparation of multiple-sensing device. The signal to noise ratio SNR of the new-device has increased by 15.14% compared with the conventional-device due to the overlap dual capacitor structure sensor. The peak-to-peak value Vpp, broadband-noise Vn, narrowband-noise Vnoise, and detectivity D* of the new-device, which is assembled with the overlap dual capacitor structure sensor, are all measured and calculated in this paper.