کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11032070 | 1645695 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Development of high temperature operation silicon based MOSFET for harsh environment application
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک و نجوم (عمومی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this letter, a novel metal oxide semiconductor field effect transistor (MOSFET) is designed to improve high temperature operation characteristic. The MOSFET used in this study can reduce the leakage current by reducing carrier injection at high temperature by using silicon on insulator (SOI) substrate and wide band gap material. The electron energy barrier formed by the wide band gap can inhibit the source carrier from being injected into the channel at high temperature. Feasibility of suggested device is confirmed by device simulation and analysis of device parameters affecting device operation is performed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Results in Physics - Volume 11, December 2018, Pages 475-481
Journal: Results in Physics - Volume 11, December 2018, Pages 475-481
نویسندگان
Ikhyeon Kwon, Hyuck-In Kwon, Il Hwan Cho,