کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11032093 | 1645688 | 2018 | 16 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Near infrared broadband emission of a new bismuth-doped Gd0.1Y0.9AlO3 crystal
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک اتمی و مولکولی و اپتیک
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چکیده انگلیسی
A Bi doped Gd0.1Y0.9AlO3 (GYAP) crystal with high optical quality was successfully grown by the Czochralski method. An intense and broadband Near-IR (NIR) 900-1700â¯nm emission in Bi:GYAP crystal was observed for the first time. By analyzing the emission and excitation spectra of the Bi:GYAP crystal, the optical properties were researched in details. It is found that the two broadband NIR luminescence emission mainly peaking at 1005 and 1565â¯nm are ascribed to two different Bi+ related centers distinct sites. Moreover, the visible emission peaking at 430, 470, 515 and 630â¯nm are also obtained under the excitation at 250â¯nm, which show that there exist multiple valence states of luminescence in the mixed crystal. All these results show that Bi:GYAP crystal may become an attractive host for developing wide tuning range and ultrashort lasers at around NIR wavelength.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Infrared Physics & Technology - Volume 94, November 2018, Pages 214-218
Journal: Infrared Physics & Technology - Volume 94, November 2018, Pages 214-218
نویسندگان
Nan Chen, Peixiong Zhang, Hao Yin, Siqi Zhu, Zhen Li, Zhenqiang Chen,