کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
11262842 1815031 2018 21 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A low-noise voltage-controlled ring oscillator in 28-nm FDSOI technology for UWB applications
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر شبکه های کامپیوتری و ارتباطات
پیش نمایش صفحه اول مقاله
A low-noise voltage-controlled ring oscillator in 28-nm FDSOI technology for UWB applications
چکیده انگلیسی
In millimeter wave systems, performance degradation mainly occurs due to high phase noise of voltage-controlled oscillators (VCOs). This paper proposes a low power, low phase noise ring-VCO developed for ultra-wide band applications identified for possible 5G usage. For this purpose, a novel differential symmetrical load delay cell based 3-stage ring oscillator has been introduced to design the ring-VCO. The 28 nm CMOS Fully Depleted Silicon On Insulator (FDSOI) technology is adopted for designing this VCO circuit with 1 V power supply while a new voltage control through the transistor body bias is implemented. The simulated results show that the proposed oscillator works in the tuning range of 29-49 GHz and dissipates 3.75 mW of power. It exhibits a phase noise of −129.2 dBc/Hz at 1 MHz offset from 49 GHz oscillation frequency, and a remarkable Figure of Merit (FoM) of −217.26 dBc/Hz. With similar power supply, the phase noise rises to −93.16 dBc/Hz for a second oscillator involving more of active components exactly 9 delay cells. Further, the impact of the operation temperature variation on the VCO performance is investigated. Results show a drift in the oscillation frequency for a temperature step from 27 °C to 40 °C and a degradation of 3dBc in the phase noise performance.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: AEU - International Journal of Electronics and Communications - Volume 97, December 2018, Pages 94-101
نویسندگان
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